A research team led by Professor CHEN Wei from the Department of Physics and the Department of Chemistry at NUS, fabricated ultra-thin molybdenum disulfide (MoS2) memtransistor arrays with a 500 nm channel length and demonstrated precise Schottky barrier modulation. By carefully exposing selected areas to oxygen, they created and controlled a small number of sulfur vacancies, which allow them to fine‑tune the contact barriers so that electricity flows through the devices in a precise, predictable way. This research work was carried out in collaboration with Dr JIN Tengyu from Shanghai University, China.